Diodes: Schottky Barrier Diodes

Schottky Barrier Diodes design engineers Panasonic
Improved VF and IR characteristics and ESD robustness by JBS structure in tiny 0,08cm² CSP packages.

Panasonic's Schottky Barrier Diode (SBD) has the Junction Barrier Schottky (JBS) structure using the 150-nm fine process technology, allowing small, high efficiency applications.

Panasonic has developed new small, thin SBD using new CSP (Chip Size Package) package technology, which features low power consumption and high heat dissipation. This product is best suited for smaller smartphone with long battery life. It is also suitable for tablet PC, battery charger, and AC adapter or other applications.

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Schottky Barrier Diodesn/a


Our original JBS (Junction Barrier Schottky) structure

  • Industry-leading VF-IR characteristic, high ESD voltage, and small size have been achieved by using the JBS (Junction Barrier Schottky) structure

Clip connection structure (Wireless package technology)

  • High power achieved with the clip connection structure (Wireless package technology)
  • There is an example of achieving over 10 times higher non-repetitive peak forward surge current (IFSM)

New CSP (Chip Size Package) technology

Panasonic has developed industry's smallest Schottky Barrier Diode (SBD) with industry's lowest power consumption and highest heat dissipation by using the new CSP (Chip Size Package) technology.


  • Rectification
  • Reverse-current protection for charging circuit
  • High frequency detector circuit and many more

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